Researchers Develop Stepwise Evaporation Method to Reduce Contact Resistance in Transistors

<p>As transistor dimensions continue to shrink, though, structural disorder in metals and at metal-semiconductor interfaces increasingly impedes carrier injection and transport. Metals therefore need a level of structural order comparable to that of single-crystal semiconductors in order to push device performance toward its physical limits.</p> <p>The post <a href="https://www.semiconductor-digest.com/researchers-develop-stepwise-evaporation-method-to-reduce-contact-resistance-in-transistors/">Researchers Develop Stepwise Evaporation Method to Reduce Contact Resistance in Transistors</a> appeared first on <a href="https://www.semiconductor-digest.com">Semiconductor Digest</a>.</p>