M3D 6T SRAM With BEOL Pass-Gates at 2nm (Georgia Tech, Synopsys)
<p>Researchers from Georgia Institute of Technology and Synopsys published a technical paper titled “A Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM with BEOL Pass-Gates for the 2nm Node.” Abstract Excerpt: The paper proposes “a monolithic-3D (M3D) 6T SRAM at the 2nm node” that integrates BEOL IGO pass-gates with an all-silicon nanosheet latch, buried power rails, and... <a class="read_more" href="https://semiengineering.com/m3d-6t-sram-with-beol-pass-gates-at-2nm-georgia-tech-synopsys/">» read more</a></p>
<p>The post <a href="https://semiengineering.com/m3d-6t-sram-with-beol-pass-gates-at-2nm-georgia-tech-synopsys/">M3D 6T SRAM With BEOL Pass-Gates at 2nm (Georgia Tech, Synopsys)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>
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