Molecular Dynamics Study Explains Aluminum Dopant Activation In 4H-SiC (TU Wien, Silvaco)

<p>Researchers from TU Wien and Silvaco Europe published a technical paper titled “The influence of implantation conditions on dopant activation in Al-implanted 4H-SiC: A MD study applying an Al potential fitted to DFT barriers.” Abstract Excerpt: &#8220;The non-monotonic dependence of Al dopant activation on implantation temperature in 4H-SiC has been experimentally observed but its atomistic... <a class="read_more" href="https://semiengineering.com/molecular-dynamics-study-explains-aluminum-dopant-activation-in-4h-sic-tu-wien-silvaco/">&#187; read more</a></p> <p>The post <a href="https://semiengineering.com/molecular-dynamics-study-explains-aluminum-dopant-activation-in-4h-sic-tu-wien-silvaco/">Molecular Dynamics Study Explains Aluminum Dopant Activation In 4H-SiC (TU Wien, Silvaco)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>