New GaN-on-Si transistor withstands nearly 4kV before breakdown
<p>A new kind of transistor – the Intrinsic Polarisation Super Junction ( iPSJ) has been invented to deal with the propensity of GaN transistors to fail at very high voltages. […]</p>
<p>The post <a href="https://www.electronicsweekly.com/news/business/new-transistor-withstands-nearly-4kv-before-breakdown-2026-09/">New GaN-on-Si transistor withstands nearly 4kV before breakdown</a> appeared first on <a href="https://www.electronicsweekly.com">Electronics Weekly</a>.</p>
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