DRAM giants target 3D stacking to break memory wall and power bottlenecks
At a shared stage at Semicon Taiwan 2026, executives from Samsung Electronics, SK Hynix, and Micron agreed that traditional 2.5D high-bandwidth memory (HBM) using interposers is approaching a performance ceiling. Consequently, the industry is transitioning toward 3D vertical stacking architectures to minimize transmission power consumption and leverage wafer-level bonding technologies.
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