DB HiTek completes reliability qualification for 8-inch SiC MOSFET process
DB HiTek said it has completed reliability qualification for its 1,200 V silicon carbide (SiC) MOSFET process on 8-inch wafers. The development could expand foundry capacity for next-generation power semiconductors used in electric vehicles, renewable energy systems, and industrial equipment. The company is targeting volume production in 2027 as SiC manufacturers shift toward larger wafers.
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