Imec demonstrates the extension of chemically amplified resists for High NA EUV lithography
This week, at 2026 SPIE Photomask Technology + EUV Lithography Conference, imec, a world-leading research and innovation hub in advanced semiconductor technologies, demonstrates the feasibility of patterning tight-pitch random logic structures after a CAR-based single-print High NA EUV lithography step. Logic structures include lines/spaces down to 22nm pitch, and vias at 28nm center-to-center distance. These … <a href="https://www.eejournal.com/industry_news/imec-demonstrates-the-extension-of-chemically-amplified-resists-for-high-na-euv-lithography/" class="more-link">Read More →<span class="screen-reader-text"> "Imec demonstrates the extension of chemically amplified resists for High NA EUV lithography"</span></a>
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