Characterizing Charge Components In TMD-based MOS Structures (imec, KU Leuven, ASM)

<p>Researchers at imec, KU Leuven, and ASM published a technical paper titled “Dissecting the transition metal dichalcogenides-based metal-oxide-semiconductor structures charge components.” Abstract Excerpt: “Different variable charges such as interface traps, oxide border traps, and mobile carriers can contribute to the total capacitance in metal oxide semiconductor (MOS) field-effect devices. This study aims to quantify these... <a class="read_more" href="https://semiengineering.com/characterizing-charge-components-in-tmd-based-mos-structures-imec-ku-leuven-asm/">&#187; read more</a></p> <p>The post <a href="https://semiengineering.com/characterizing-charge-components-in-tmd-based-mos-structures-imec-ku-leuven-asm/">Characterizing Charge Components In TMD-based MOS Structures (imec, KU Leuven, ASM)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>