First experimental demonstration of S-band large-signal performance for GaN HBTs

A Chinese research team has achieved consecutive breakthroughs in gallium nitride (GaN) heterojunction bipolar transistors (HBTs), with results published in IEEE Electron Device Letters (IEEE EDL) in both 2025 and 2026. The 2026 paper was selected as an Editor’s Pick, marking a transition for GaN HBTs from frequency characterization to practical power application evaluation...