Predictive TCAD Modeling of Normally-Off p-GaN HEMTs for Dynamic RDS(on), Leakage, Breakdown, and ML-Based Design Exploration

<p>Workflow for predictive simulation of normally-off p-GaN HEMTs, with an emphasis on device-physics calibration, leakage modeling, dynamic RDS(on), breakdown behavior, and ML-assisted design exploration. </p> <p>The post <a href="https://semiengineering.com/predictive-tcad-modeling-of-normally-off-p-gan-hemts-for-dynamic-rdson-leakage-breakdown-and-ml-based-design-exploration/">Predictive TCAD Modeling of Normally-Off p-GaN HEMTs for Dynamic RDS(on), Leakage, Breakdown, and ML-Based Design Exploration</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>