Comparing A7 CFET and A10 Nanosheet FETs From Parasitics to Chip Reliability (TUM, UNIMORE, Applied Materials)
<p>Researchers at the TU Munich, University of Modena and Reggio Emilia, and Applied Materials published a technical paper titled “System-Technology Co-Evaluation of A7 CFET and A10 NSFET Technologies from Cell Parasitics to Chip Reliability.” Abstract Excerpt: “ In this work, we present a physics-based thermal- and aging-aware system-technology co-evaluation (STCO) flow to assess parasitic RCs in... <a class="read_more" href="https://semiengineering.com/comparing-a7-cfet-and-a10-nanosheet-fets-from-parasitics-to-chip-reliability-tum-unimore-applied-materials/">» read more</a></p>
<p>The post <a href="https://semiengineering.com/comparing-a7-cfet-and-a10-nanosheet-fets-from-parasitics-to-chip-reliability-tum-unimore-applied-materials/">Comparing A7 CFET and A10 Nanosheet FETs From Parasitics to Chip Reliability (TUM, UNIMORE, Applied Materials)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>
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