Toshiba launches 3300V SiC MOSFET module

Toshiba Electronic Devices & Storage Corp (TDSC) of Kawasaki, Japan has launched the IX800FXF2YMS4, a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy power generation systems and power conversion systems. The new module features Toshiba’s third-generation silicon carbide (SiC) MOSFET chips, a drain–source voltage rating of 3300V and a drain current (DC) rating of 800A. Its specifications state an I2t limit value in the diode section (an indicator of surge current capability)...