Digitimes September 29, 2026 By Scarlett Yu neutral

Samsung reshuffles DRAM roadmap, prioritizing B1b hybrid bonding for D0a, HBM5

SamsungSemiconductorsMemoryRegulationData Center

Samsung Electronics is reshaping its next-generation dynamic random-access memory (DRAM) roadmap, elevating its B1b wafer-to-wafer (W2W) hybrid bonding technology from a project-specific development to the core technology behind D0a, its first sub-10nm DRAM generation. Industry observers believe Samsung's push to commercialize B1b DRAM earlier could also benefit its next-generation high-bandwidth memory (HBM) products, including HBM5.

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Samsung reshuffles DRAM roadmap, prioritizing B1b hybrid bonding for D0a, HBM5

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