Navitas awarded ALATTIS US Army project to develop 10kV power semiconductors
Gallium nitride (GaN) and silicon carbide (SiC) power semiconductor firm Navitas Semiconductor Corp of Torrance, CA, USA has been awarded the ALATTIS (Accelerated, Large-Area, 10kV SiC IGBT) program to develop next-generation 10kV silicon carbide (SiC) power semiconductor technology...
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