Renesas unveils first 650V GaN in dual-side-cooled 8mm x 8mm package for megawatt-scale AI data centers
Renesas Electronics Corp of Tokyo, Japan has launched what it claims is the industry’s first 650V GaN device with dual-side cooling for high-density power conversion in 800V high-voltage DC (HVDC) AI data-center architectures. The new TP65H020G4PLSGBD D-Mode device delivers 20mΩ on-resistance — one of the lowest in its class — in an ultra-compact, dual-side-cooled (DSC) PQFN package that handles more power in less space. Renesas is currently sampling the device to major AI data-center OEMs and ODMs...
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