Reducing Contact Resistance Pushes 2D Transistors Toward Advanced CMOS (HUST, PolyU, UCSB, NUS)

<p>Researchers at Huazhong University of Science and Technology, Hong Kong Polytechnic University, University of California, Santa Barbara, and National University of Singapore published a technical paper titled “Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers.” Abstract Excerpt: “The development of high-performance p-type monolayer transistors is critical for... <a class="read_more" href="https://semiengineering.com/reducing-contact-resistance-pushes-2d-transistors-toward-advanced-cmos-hust-polyu-ucsb-nus/">&#187; read more</a></p> <p>The post <a href="https://semiengineering.com/reducing-contact-resistance-pushes-2d-transistors-toward-advanced-cmos-hust-polyu-ucsb-nus/">Reducing Contact Resistance Pushes 2D Transistors Toward Advanced CMOS (HUST, PolyU, UCSB, NUS)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>