Pre-Silicon Power Side-Channel Leakage In Processors (University of Lübeck)

<p>Researchers from University of Lübeck published a technical paper titled “SPARC: Automated Root-Cause Analysis of Pre-Silicon Power Side-Channel Leakage in the Processor Design Flow.” Abstract Excerpt: “This paper presents SPARC, an automated framework for pre-silicon PSCL evaluation and root-cause analysis. SPARC leverages macro-cell-level Information Flow Tracking (IFT) augmented with enhanced shadow logic that tags switching... <a class="read_more" href="https://semiengineering.com/pre-silicon-power-side-channel-leakage-in-processors-university-of-lubeck/">&#187; read more</a></p> <p>The post <a href="https://semiengineering.com/pre-silicon-power-side-channel-leakage-in-processors-university-of-lubeck/">Pre-Silicon Power Side-Channel Leakage In Processors (University of Lübeck)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>