Deterministic Nucleation Enables Controlled Growth of 2D Semiconductors (KAIST, TDS, Hanyang et al.)

<p>Researchers at KAIST, TDS Innovation, Hanyang University, UNIST, et al. published a technical paper titled “Spatially deterministic nucleation of 2D semiconductors by etching flux.” Abstract Excerpt: “Nucleation control is fundamental to semiconductor deposition, governing when, where and how crystalline materials form. Conventional strategies can regulate nucleation density and, through area-selective growth, confine deposition to designated... <a class="read_more" href="https://semiengineering.com/deterministic-nucleation-enables-controlled-growth-of-2d-semiconductors-kaist-tds-hanyang-et-al/">&#187; read more</a></p> <p>The post <a href="https://semiengineering.com/deterministic-nucleation-enables-controlled-growth-of-2d-semiconductors-kaist-tds-hanyang-et-al/">Deterministic Nucleation Enables Controlled Growth of 2D Semiconductors (KAIST, TDS, Hanyang et al.)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>