Carbon-Dot Interface Enables Ultrathin High-κ Dielectrics on 2D Semiconductors (UIUC, NETL, Argonne, Monash)

<p>Researchers at the University of Illinois Urbana-Champaign, National Energy Technology Laboratory, Argonne National Laboratory, and Monash University published a technical paper titled “Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial layer.” Abstract Excerpt: “This atomically thin assembly forms a van der Waals interfacial layer that enables deposition... <a class="read_more" href="https://semiengineering.com/carbon-dot-interface-enables-ultrathin-high-%ce%ba-dielectrics-on-2d-semiconductors-uiuc-netl-argonne-monash/">&#187; read more</a></p> <p>The post <a href="https://semiengineering.com/carbon-dot-interface-enables-ultrathin-high-%ce%ba-dielectrics-on-2d-semiconductors-uiuc-netl-argonne-monash/">Carbon-Dot Interface Enables Ultrathin High-κ Dielectrics on 2D Semiconductors (UIUC, NETL, Argonne, Monash)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>