KAIST's HBM pioneer honored with S&T Innovation Award

As artificial intelligence (AI) drives demand for ever-faster computing, Kim Joung-ho, a professor from Korea Advanced Institute of Science & Technology (KAIST), credited with helping lay the foundations for high-bandwidth memory (HBM), will receive a science and technology innovation award recognizing his contributions to Korea’s semiconductor industry. The Daejeon Development Committee will present the Science and Technology Innovation Award to Kim at 11 a.m. on Thursday at Lotte City Hotel Daejeon, honoring the professor for his research and role in advancing the development and commercialization of HBM. Kim, a professor in KAIST’s School of Electrical Engineering, has spent three decades researching next-generation memory technologies, including HBM, high-bandwidth flash and high-bandwidth SRAM, according to the committee. He proposed core concepts and the basic architecture of HBM and participated in key design and technology validation work during its development in 2009, contributing to SK hynix’s commercialization of the technology in December 2013, which the committee des