Characterization of HBM Power Consumption (ETH Zurich, NYU)

<p>Researchers at ETH Zürich and New York University published a technical paper titled “Understanding the Power Consumption of Modern High Bandwidth Memory: Experimental Analysis and Modeling Using Real HBM2 DRAM Chips.&#8221; Abstract Excerpt: “We perform the first comprehensive experimental characterization of power consumed by real HBM2 DRAM chips. Our extensive characterization yields 1) the empirical... <a class="read_more" href="https://semiengineering.com/characterization-of-hbm-power-consumption-eth-zurich-nyu/">&#187; read more</a></p> <p>The post <a href="https://semiengineering.com/characterization-of-hbm-power-consumption-eth-zurich-nyu/">Characterization of HBM Power Consumption (ETH Zurich, NYU)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>