Simulations Pinpoint Leakage Pathway In GAAFETs (Sandia, Luxembourg)

<p>Researchers at Sandia National Laboratories and Luxembourg Institute of Science and Technology published a technical paper titled “Revealing New Leakage Paths in GAAFETs using Predictive First-Principles Simulations.” Abstract Excerpt: “Gate-All-Around Field-Effect Transistors (GAAFETs) are emerging as successors to Fin Field-Effect Transistors (FinFETs) and are central to continued scaling at advanced semiconductor nodes. Despite their improved... <a class="read_more" href="https://semiengineering.com/simulations-pinpoint-leakage-pathway-in-gaafets-sandia-luxembourg/">&#187; read more</a></p> <p>The post <a href="https://semiengineering.com/simulations-pinpoint-leakage-pathway-in-gaafets-sandia-luxembourg/">Simulations Pinpoint Leakage Pathway In GAAFETs (Sandia, Luxembourg)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>