Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel)

<p>Researchers at the UC Berkeley, Samsung Electronics, and Intel published “Nanoelectromechanically Gated Gain Cell eDRAM.” Abstract Excerpt: “The memory wall and the slowdown of static random access memory (SRAM) scaling have renewed interest in gain-cell embedded dynamic random access memory (DRAM). While gain cells offer high density and energy efficiency, they suffer from limited retention,... <a class="read_more" href="https://semiengineering.com/nanoelectromechanical-switches-target-more-efficient-embedded-dram-uc-berkeley-samsung-intel/">&#187; read more</a></p> <p>The post <a href="https://semiengineering.com/nanoelectromechanical-switches-target-more-efficient-embedded-dram-uc-berkeley-samsung-intel/">Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>