2D P-Type Semiconductors with Oxide N-Channel Transistors For Complementary BEOL CMOS (Stanford, Hanyang)

<p>Researchers from Stanford University and Hanyang University published a technical paper titled “Bridging the p-type gap in oxide electronics with 2D semiconductors.” &#8220;The review assesses manufacturing-aligned pathways to high-performance 2D p-channel transistors, covering transfer-free low-temperature growth, clean van der Waals contacts, gentle p-doping, and mitigation of crystallization, volatility, and interdiffusion,&#8221; and also &#8220;a pragmatic outlook... <a class="read_more" href="https://semiengineering.com/2d-p-type-semiconductors-with-oxide-n-channel-transistors-for-complementary-beol-cmos-stanford-hanyang/">&#187; read more</a></p> <p>The post <a href="https://semiengineering.com/2d-p-type-semiconductors-with-oxide-n-channel-transistors-for-complementary-beol-cmos-stanford-hanyang/">2D P-Type Semiconductors with Oxide N-Channel Transistors For Complementary BEOL CMOS (Stanford, Hanyang)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>