Open App →
Back to News Feed
Evertiq October 27, 2026 neutral

Infineon to invest €1.1 billion in 300mm GaN production in Villach

InfineonSemiconductorsSupply ChainData Center
Infineon will invest around EUR 1.1 billion by 2034 to set up high-volume production of gallium nitride (GaN) power semiconductors on 300mm wafers at its site in Villach, Austria. According to the company, it will be the first high-volume GaN fab of its kind in the world, with production scheduled to start by the end of 2027.
Read original article ↗

Related Articles

Infineon and ASMedia team up on end-to-end USB 20Gbps setup for AI cameras

Infineon Technologies and ASMedia have announced a partnership to speed up the adoption of 20Gbps USB, driven by demand

Digitimes · October 27, 2026

Infineon supplying world’s first 900V GaN monolithic BDS devices to Enphase

Infineon Technologies AG of Munich, Germany is to supply what is said to be the world’s first 900V gallium nitride (GaN)

Semiconductor Today · October 26, 2026

Infineon, NVIDIA push gallium nitride power for 800-volt AI data centers

Infineon Technologies is expanding its work with Nvidia on 800-volt direct current power architectures for AI data cente

Digitimes · October 22, 2026

Infineon collaborates with NVIDIA on GaN-based power conversion systems for 800VDC AI data centers

Infineon Technologies AG of Munich, Germany is advancing its collaboration with NVIDIA on 800V direct current (VDC) powe

Semiconductor Today · October 21, 2026