Micron dismisses 4F-squared DRAM as CXMT presses ahead — why Samsung, SK Hynix remain divided

Micron Technology and China's CXMT have taken sharply different approaches to next-generation DRAM scaling, exposing a divide over the commercial viability of 4F-squared memory-cell architecture. While CXMT is advancing 4F-squared towards commercial production to improve bit density, Micron argues that capacitor-scaling constraints undermine its cost advantages and is prioritising 6F-squared technology and a longer-term transition to 3D DRAM. Samsung Electronics and SK Hynix, meanwhile, are pursuing alternative development paths, highlighting the industry's competing approaches to extending DRAM density and manufacturing efficiency.