Fast, Sub-Volt HZO Ferroelectric Capacitors For DRAM-Like Memory (SNU)

<p>Seoul National University-led researchers published “Resolving the Kay–Dunn limit and the speed–endurance dilemma in ferroelectric Hf0.5Zr0.5O2 for DRAM-class sub-volt capacitors.” The first author, Geun Hyeong Park, Ph.D., summarizes the work here: &#8220;Fast, frequently rewritten memory requires low operating voltages, rapid switching, and high cycling endurance. In ferroelectric capacitors, however, accelerating polarization switching often requires higher voltages that... <a class="read_more" href="https://semiengineering.com/fast-sub-volt-hzo-ferroelectric-capacitors-for-dram-like-memory-snu/">&#187; read more</a></p> <p>The post <a href="https://semiengineering.com/fast-sub-volt-hzo-ferroelectric-capacitors-for-dram-like-memory-snu/">Fast, Sub-Volt HZO Ferroelectric Capacitors For DRAM-Like Memory (SNU)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>