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Semiconductor Today November 10, 2026 neutral

Mitsubishi Electric suppresses frequency dispersion in GaN transistors using GaN substrates

AI / LLMSemiconductors
Tokyo-based Mitsubishi Electric Corp claims that, for the first time in the world, it has elucidated the effects of frequency dispersion (whereby current values and other characteristics of high-frequency devices vary depending on the operating frequency) caused by crystal defects in a gallium nitride (GaN) transistor (fabricated from a single-crystal GaN epitaxial layer on a single-crystal GaN substrate) and demonstrated that frequency dispersion can be significantly suppressed...
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