Nexperia adds ultra-low-resistance GaN FETs for next-gen power density and efficiency

Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) has launched new ultra-low-ohmic gallium nitride (GaN) FETs, expanding its low- and medium-voltage GaN portfolio with devices spanning 18V to 200V. Designed to address power design challenges in AI data centres, humanoid robotics, battery-powered tools, renewable energy, high-efficiency SR and DC–DC conversion, the new devices combine high current capability, fast switching performance and compact thermally enhanced packages to support increased efficiency and power density across a broad range of applications...