Infineon says it processed functional power devices on 300mm SiC wafers
Infineon Technologies AG said on November 9, 2026, that it has processed 300mm silicon carbide (SiC) wafers into functional power devices at its fab in Villach, Austria, which it described as an industry first in a full-scale semiconductor fab environment. The company plans to show the first processed 300mm SiC wafer publicly at the electronica trade show in Munich, which opens on November 10.
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