800V DC architecture poised to drive GaN power device demand, with SiC competition a potential variable

As power consumption in AI data centers continues to surge, the adoption of an 800V DC power distribution architecture to boost energy efficiency has emerged as a market consensus. Gallium Nitride (GaN) power devices are expected to play a vital role within this new power topology. By 2030, GaN epitaxial wafers consumed by 800V DC power systems are projected to account for 6% of the total, making it the fastest-growing application segment for GaN power devices.