NoMIS Power Demonstrates 6.5 kV SiC MOSFET, Advancing a High-Voltage Roadmap to 10 kV and 20 kV SiC IGBTs

<p>Initial 6.5 kV silicon carbide (SiC) results — over 8 kV blocking, 90 mΩ, 55 A — establish NoMIS Power as a U.S. source of high-voltage SiC devices, with a roadmap toward 10 kV SiC MOSFETs and 20 kV SiC IGBTs. ALBANY, N.Y., Aug. 6, 2026 /PRNewswire/ -- NoMIS Power Corporation, a leader in...</p>