Ultrafast X-Ray Diffraction Maps Thermal Transport In GaN Thin Films (MIT, SLAC, Stanford, Argonne)

<p>Researchers from MIT, SLAC, Stanford University, and Argonne National Laboratory published a technical paper titled “Spatiotemporal mapping of anisotropic thermal transport in GaN thin films via ultrafast X-ray diffraction.” Abstract Excerpt: The paper presents a “non-contact, spatiotemporal-resolved ultrafast X-ray diffraction method to extract in-plane thermal conductivity and thermal boundary conductance, using GaN thin films on... <a class="read_more" href="https://semiengineering.com/ultrafast-x-ray-diffraction-maps-thermal-transport-in-gan-thin-films-mit-slac-stanford-argonne/">&#187; read more</a></p> <p>The post <a href="https://semiengineering.com/ultrafast-x-ray-diffraction-maps-thermal-transport-in-gan-thin-films-mit-slac-stanford-argonne/">Ultrafast X-Ray Diffraction Maps Thermal Transport In GaN Thin Films (MIT, SLAC, Stanford, Argonne)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>