Taiwan team builds high-performance MoS2 transistor to ease 2D semiconductor limits

Taiwan researchers announced on August 6 that they had developed a high-performance monolayer molybdenum disulfide (MoS2) top-gate transistor designed to address a long-standing interface problem in two-dimensional semiconductors. The work brought together teams from National Yang Ming Chiao Tung University, Academia Sinica’s Research Center for Applied Sciences, and Taiwan Semiconductor Manufacturing Co., according to Taiwan's National Science and Technology Council.