Sapphire Surface Modification Enables Wafer-Scale 2D Semiconductor Growth (Peking U., CAS et al.)
<p>Researchers from Peking University, Chinese Academy of Sciences et al. published a technical paper titled “Homo-metal-element mediated surface modification of sapphire for robust epitaxy of wafer-scale single-crystalline 2D semiconductors.” Abstract Excerpt: The paper presents a “homo-metal-element (W/Mo and Al) surface modification strategy of commercial C/M sapphire” and demonstrates “2-inch scale monolayer WS2 or MoS2 single-crystal... <a class="read_more" href="https://semiengineering.com/sapphire-surface-modification-enables-wafer-scale-2d-semiconductor-growth-peking-u-cas-et-al/">» read more</a></p>
<p>The post <a href="https://semiengineering.com/sapphire-surface-modification-enables-wafer-scale-2d-semiconductor-growth-peking-u-cas-et-al/">Sapphire Surface Modification Enables Wafer-Scale 2D Semiconductor Growth (Peking U., CAS et al.)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>
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