100V E-mode GaN-based discrete power transistors.
<p>Renesas has expanded its GaN portfolio into low-voltage applications with its first family of 100V enhancement mode GaN-based discrete power transistors. The RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC low-voltage GaN FETs […]</p>
<p>The post <a href="https://www.electronicsweekly.com/news/business/100v-enhancement-mode-e-mode-gan-based-discrete-power-transistors-2026-10/">100V E-mode GaN-based discrete power transistors.</a> appeared first on <a href="https://www.electronicsweekly.com">Electronics Weekly</a>.</p>
Read original article ↗
Related Articles
LB Semicon expands power chip capacity as Qualcomm production ramps up
South Korean outsourced semiconductor assembly and test (OSAT) provider LB Semicon is expanding power semiconductor back
SLG46801 ultra-Compact GreenPAK IC offers multi-time programmability
Renesas Electronics is sampling the SLG46801, its smallest GreenPAK configurable mixed-signal device. The 9-ball device
Design Platform Integrates Software, Firmware, and Hardware Development
Renesas 365, powered by Altium, is a virtual design environment that unifies software, firmware, and hardware dev workfl
Renesas Electronics Corp of Tokyo, Japan has launched what it claims is the industry’s first 650V GaN device with dual-s