Renesas adds first 100V E-mode FETs to low-voltage GaN portfolio
Renesas Electronics Corp of Tokyo, Japan has expanded its gallium nitride (GaN) portfolio into low-voltage applications with its first family of 100V enhancement-mode (E-mode) GaN-based discrete power transistors. The RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC low-voltage GaN FETs are said to deliver ultra-fast switching speeds and enhanced thermal performance in efficiency-critical, high-power-density applications, including AI data centers, humanoid robotics, factory automation and industrial motor drives, power tools and solar micro-inverters...
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