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Electronics Weekly October 28, 2026 By David Manners neutral

Infineon to put €1.1bn into GaN fab

InfineonSemiconductors
<p>Infineon intends to build the first high-volume 300mm GaN fab by investing around €1.1 billion in its llVillach site by 2034. The EU is contributing €319 million towards the cost. [&#8230;]</p> <p>The post <a href="https://www.electronicsweekly.com/news/business/infineon-to-put-e1-1bn-into-gan-fab-2026-10/">Infineon to put €1.1bn into GaN fab</a> appeared first on <a href="https://www.electronicsweekly.com">Electronics Weekly</a>.</p>
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