Intrinsic Polarization Superjunctions Boost GaN-On-Silicon Power Devices (EPFL)

<p>Researchers from École Polytechnique Fédérale de Lausanne (EPFL) published a technical paper titled “Intrinsic polarization superjunctions in III-nitride heterostructures for efficient power electronics.” Abstract Excerpt: &#8220;III-nitride semiconductors combine a wide bandgap with low sheet resistance and, thus, can be used for efficient power electronics. Their lateral architecture also enables monolithic integration on cost-effective silicon. However,... <a class="read_more" href="https://semiengineering.com/intrinsic-polarization-superjunctions-boost-gan-on-silicon-power-devices-epfl/">&#187; read more</a></p> <p>The post <a href="https://semiengineering.com/intrinsic-polarization-superjunctions-boost-gan-on-silicon-power-devices-epfl/">Intrinsic Polarization Superjunctions Boost GaN-On-Silicon Power Devices (EPFL)</a> appeared first on <a href="https://semiengineering.com">Semiconductor Engineering</a>.</p>