EDN October 7, 2026 By Susan Nordyk neutral

GaN FET meets megawatt-scale demands

RenesasAI / LLMSupply ChainData Center

<img width="800" height="464" src="https://www.edn.com/wp-content/uploads/Renesas-without-words.png?fit=800%2C464" class="webfeedsFeaturedVisual wp-post-image" alt="" style="display: block; margin-bottom: 5px; clear:both;max-width: 100%;" link_thumbnail="" decoding="async" loading="lazy" srcset="https://www.edn.com/wp-content/uploads/Renesas-without-words.png?w=800 800w, https://www.edn.com/wp-content/uploads/Renesas-without-words.png?w=300 300w, https://www.edn.com/wp-content/uploads/Renesas-without-words.png?w=768 768w" sizes="auto, (max-width: 800px) 100vw, 800px" /><p>Renesas is sampling what it says is the industry’s first 650-V GaN FET with dual-side cooling for 800-V HVDC AI data centers.</p> <p>The post <a href="https://www.edn.com/gan-fet-meets-megawatt-scale-demands/">GaN FET meets megawatt-scale demands</a> appeared first on <a href="https://www.edn.com">EDN</a>.</p>

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