EDN October 14, 2026 By Susan Nordyk neutral

100-V GaN FETs lower switching FOM

RenesasSemiconductorsData Center

<img width="800" height="448" src="https://www.edn.com/wp-content/uploads/Renesas-100-V-GaN-FCLGA.png?fit=800%2C448" class="webfeedsFeaturedVisual wp-post-image" alt="" style="display: block; margin-bottom: 5px; clear:both;max-width: 100%;" link_thumbnail="" decoding="async" loading="lazy" srcset="https://www.edn.com/wp-content/uploads/Renesas-100-V-GaN-FCLGA.png?w=800 800w, https://www.edn.com/wp-content/uploads/Renesas-100-V-GaN-FCLGA.png?w=300 300w, https://www.edn.com/wp-content/uploads/Renesas-100-V-GaN-FCLGA.png?w=768 768w" sizes="auto, (max-width: 800px) 100vw, 800px" /><p>Renesas Electronics has launched its first family of 100-V enhancement-mode (E-mode) discrete GaN power transistors.</p> <p>The post <a href="https://www.edn.com/100-v-gan-fets-lower-switching-fom/">100-V GaN FETs lower switching FOM</a> appeared first on <a href="https://www.edn.com">EDN</a>.</p>

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