Infineon’s OktoberTech: Edge AI, SDVs, and the Road to 800 VDC

Infineon to put €1.1bn into GaN fab

Infineon intends to build the first high-volume 300mm GaN fab by investing around €1.1 billion in its llVillach site by

Electronics Weekly · October 28, 2026

Infineon establishing first high-volume fab for GaN power semiconductors on 300mm wafers in Europe

Infineon Technologies AG of Munich, Germany is establishing the world’s first high-volume manufacturing facility for gal

Semiconductor Today · October 27, 2026

Infineon and ASMedia team up on end-to-end USB 20Gbps setup for AI cameras

Infineon Technologies and ASMedia have announced a partnership to speed up the adoption of 20Gbps USB, driven by demand

Digitimes · October 27, 2026

Infineon to invest €1.1 billion in 300mm GaN production in Villach

Infineon will invest around EUR 1.1 billion by 2034 to set up high-volume production of gallium nitride (GaN) power semi

Evertiq · October 27, 2026